Simulation of laser annealing of Hg0.8Cd0.2Te

Abstract

Computer simulation of the diffusion processes of the atoms in a semiconductor was performed. It was demonstrated that one can cause a great local change of concentration of impurities or intrinsic defects in epitaxial films of Hg0.8Cd0.2Te by long pulses of laser radiation. The inclusion of the action of phonons in the diffusion processes leads to the observation of an unexpected effect of laser annealing. The role of phonons in the diffusion processes depends on the temperature gradient.