Abstract
The resistively shunted junction (RSJ) model of a Josephson junction in a microwave field is studied using both analog and digital simulators. A comparison of the two methods shows very good agreement. Voltage-current characteristics of the Josephson junction in the low-frequency limit and their transition to chaotic behavior due to the punchthrough effect are investigated. The inverse ac effect on high-β c junctions is simulated. Fractional inverse steps are found.
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