Simulation of irradiation damage in CsPbI3-based perovskite solar cells by energetic protons

Abstract

Perovskite solar cells are emerging as one of the most promising energy sources for space applications. However, the displacement damage of solar cells in the space environment has gradually deteriorated their performance. In this work, the depth distribution of primary knocked-on atoms (PKA), non-ionizing energy loss and defect concentration of CsPbI3-based perovskite solar cells irradiated by 0.1–2000 MeV protons have been simulated by the Geant4 toolkit. It is found that the PKA yield shows an obvious step behavior near the layer boundary of the solar cell, and that the electron and hole transport layers have the high defect concentration whereas the CsPbI3-based perovskite layer owns the least PKA yield. In particular, in the geostationary orbit, the radiation damage effect caused by space protons to the solar cells is approximately equivalent to that irradiated by 0.18 MeV protons, which provides a good reference for ground irradiation experiments for CsPbI3-based perovskite solar cells.