Simulation of Irradiated Detectors

Abstract

The expected increments in the radiation fluences to which the Si sensors will be exposed after future upgrades of LHC demands the systematic investigation of radiation damage of silicon sensors. The campaigns to produce radiation hard Si sensors have already been initiated by CMS and ATLAS. The experimental investigation of radiation damage should be complemented by simulations of silicon sensors with proper radiation damage modeling. The radiation damage modeling not only provides insight in the understanding of the radiation damage but, it is also helpful in the sensor design optimization. The radiation damage simulation of silicon sensors are needed to be carried out by simultaneous incorporation of appropriate bulk and surface damages since both the strip and pixel sensors undergo these degrading effects. The use of either bulk damage or surface damage alone can lead to wrong conclusions. In this work, simulation of irradiated silicon sensors incorporating the bulk and surface damages, using TCAD tool (Silvaco), are discussed. The bulk damage is parametrized by two trap model while the surface damage is incorporated in the simulations using oxide charge density (QF) and interface trap density (Nit).