Abstract
AbstractIon-beam induced etching and deposition rates are proportional to the flux of recoils reaching the surface. Based on this finding we propose an improved algorithm for etching and deposition simulations. In this algorithm the recoil flux at each point on the surface is calculated by summing up the recoil fluxes originating from ions impinging on any other surface point. The latter are determined by interpolation in tables calculated by binary collision simulations. For concave surfaces a correction to this algorithm is proposed. Fluxes calculated by this model are in good agreement with binary collision simulations of collision cascades in the same 2-d structure. Consistent with experimental findings, the model predicts that deposited pillars are broader than the ion beam, while etched trenches do not show such broadening. The pillar broadening is related to the lateral straggling of the recoils.
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