Abstract
Intrinsic bistability occurring in resonant tunneling (RT) diodes is analyzed by the ensemble Monte Carlo simulation, which can handle the wave nature of electrons in RT structures. An unambiguous hysteresis in the current-voltage characteristic is revealed in an asymmetric AlGaAs/GaAs double barrier structure consisting of a thin barrier next to a cathode, a well and a thick barrier. This result strongly supports the existence of bistability as an intrinsic nature. This phenomenon is discussed in relation to dynamical electron accumulation in the well.
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