Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

R Quay,V Palankovski,S Selberherr,A Leuther,M Chertouk

doi:10.1109/iedm.2000.904289

Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

R Quay, V Palankovski + Show 3 more

https://doi.org/10.1109/iedm.2000.904289

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Publication Date: Jan 1, 2000

Citations: 6

Affiliation: University of Vienna

#Single Set Of Physical Parameters #Single Set Of Parameters + Show 8 more

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Abstract

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of self-heating, impact ionization, SiN surface effects, and material composition is incorporated, which renders the simulation results suitable for the evaluation of device reliability issues. Starting from the analysis of gate-currents the simulation model can quantitatively support the basic understanding of this advanced material system.

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