Abstract
We develop a fully self-consistent solver for the six-band k ⋅ p Schrödinger and Poisson equations to compute the valence-band structure of Si and Ge devices with arbitrary substrate orientation and uniaxial or biaxial strain. This allows us to compute the potential, charge distribution and subband energy dispersion relation for hole inversion layers in different devices and, using a simplex Monte Carlo simulator, to evaluate the low-field mobility. New procedures have been developed to calculate the scattering rates. The results obtained in the case of a (0 0 1) Si MOSFET device are compared with experimental mobility curves and a very good agreement is found. Then, hole mobility curves for different structures and crystallographic orientations both with strained and unstrained materials are evaluated.
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