Abstract
The dual junction (tandem) cell structure (InGaP/GaAs) is depending on Indium gallium Phosphides (InGaP) as the upper cell, Gallium Arsenide (GaAs) as the lower cell, and behaves as tunnel junction (TJ). The structure of the (InGaP/GaAs) dual junction cell was simulated in this work using SILVACO program to obtain a high solar cell efficiency. Firstly, the effect of doping concentration and thickness of window layer of the upper cell was investigated on the (InGaP/GaAs) tandem cell performance. Then the GaAs /GaAs (TJ) is replaced by an InGaP/GaAs (TJ).A comparison of performance parameters between the two types of tunnel diode (GaAs / GaAs) and (InGaP/GaAs) was studied. The parameters that have been compared are open-circuit voltage (VOC), efficiency (η), the short circuit current density (JSC), and Fill Factor (FF). Quite high operating factors for tandem cell are achieved by taking into account the crucial number of cells as well as improving layer parameters of the layers. All calculations and simulations of tandem cell are performed with the typical AM1.5 solar spectrum light intensity of 1-sun at room temperature (300 K). Lastly, the findings illustrate that the optimum properties of the suggested tandem cell are efficiency (η) = 34.37 percent, VOC = 2.449 V, JSC = 21.69 mA/cm2, FF=89.33 percent.
Highlights
In the latest years, the requirement for renewable energy sources increased to decrease the emission of carbon dioxide and avoid using conventional energy sources such as Petrol, Coal, and Oil that pollutes the environment, which is why solar cells have invented and it is the most promising renewable energy [1]
The purpose of each layer is to gather a part of the solar spectrum (InGaP) and (GaAs) compounds are one of the main semiconductor materials used in the manufacture of tandem cells. (InGaP) is a semiconductor material with a large bandgap that is lattice-matched to Gallium Arsenide (GaAs) and Ge [4], which makes it an ideal material for the upper cell of the tandem structure
The direct bandgap and high absorption rate are important properties of Indium gallium Phosphides (InGaP) and GaAs [5] [6].The tandem cells are more efficient than their equivalents of a single layer [7]
Summary
The requirement for renewable energy sources increased to decrease the emission of carbon dioxide and avoid using conventional energy sources such as Petrol, Coal, and Oil that pollutes the environment, which is why solar cells have invented and it is the most promising renewable energy [1]. Multi-layer solar cell structure (tandem) consisting of a number of single junction built of several materials that have different band gaps [2] [3]. The direct bandgap and high absorption rate are important properties of InGaP and GaAs [5] [6].The tandem cells are more efficient than their equivalents of a single layer [7]. Because of their high industrialization cost [8], these devices which extremely efficient are still confined to high cost applications, including space applications and high concentrated systems, their higher efficient compared to commonly accessible materials such as silicon cells. In this paper Silvaco, atlas software was used to simulate (InGaP/GaAs) cell and study the impact of multiple factors like thicknesses, and doping concentration level of layers in the (InGaP/GaAs) multi-layer solar cell on the parameters of solar cell shown, like, (FF), (VOC), (JSC), and (η)
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