Simulation of Growth Rate of Chemical-Vapour-Deposited TiN Film along the Axial Direction in a Tubular Reactor

Abstract

A model was proposed to simulate the growth rates of chemical-vapour deposited TiN films obtained in the previous study. In this model, flow and mass transfers are taken into account. The chemical reaction rate which expresses the effects of TiCl 4 and HCl partial pressures is used. The calculated distributions of film growth rate almost agreed with the experimental results, and the effects of gas flow rate, deposition temperature and partial pressure of TiCl 4 on the growth rates of film were explained by the proposed model. From a comparison between the calculated and experimental growth rates of the films, it was shown that the deposition occurred under the reaction controlled conditions at 1223 K, and that the effect of mass transfer resistance was larger at low partial pressures of TiCl 4 and at temperatures higher than 1273 K