Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor (M‐R‐S) model implemented in TCAD

Abstract

AbstractIn this paper, we describe simulations of highly rectifying carbon/p‐Si junctions using Sentaurus TCAD from Synopsys. 2‐D and 3‐D models were constructed and optimized to fit I‐V characteristics measured from these junctions. The TCAD models included a resistive interface layer, previously observed experimentally. From the model, the interface resistance was determined to be 0.04 Ω·cm2, and the work function of the graphitic contacts was determined to be 4.43 eV. The latter is the work function at the interface, which cannot be measured experimentally. Schottky barrier lowering was implemented in the model to provide agreement with the measurements. The modeling provided information that could not be obtained from measurements and suggested a path to improved devices.