Abstract
The grain size effects on gas sensing characteristics of semiconductor gas sensor are simulated based on the model of gradient distributed oxygen vacancies, which describes the dynamics of oxygen vacancies in an idealized cooling process. Sensor resistance and response to oxidizing gases, as functions of grain size (RC) and depletion layer width (w), are calculated from the steady-state vacancy distribution in the depletion layer through Poissons equation. Simulation curves are plotted to fit the experimental data from WO3 and In2O3 sensors in nitrogen oxides detection. The fitting results illustrate the applicability of the model on quantitative interpretation of the grain size effects on oxidizing gas detection. The widths of depletion layer in WO3 and In2O3 nanograins are estimated.
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