Simulation of gradient floating field limiting rings for 4H-SiC power devices

Abstract

In order to have higher breakdown voltage (BV) for 4H-SiC power devices, a novel edge termination structure with gradient floating field limiting rings (FFLR) is proposed. The device blocking performance between conventional FFLR and proposed structures are compared by 2-D numerical device simulation. The BV can be increased by 10% and 20% of parallel plane breakdown voltage with the same P-well and epitaxial parameters when step is 0.2μm and 0.4μm.