Abstract
A surface model for open area etching of SiO 2 is coupled with a model to calculate the local values of etching rate on each elementary surface of the structure being etched. The surface model includes the surface chemistry for ion-enhanced etching or deposition. The local etching model (essentially a local flux calculation model) includes shadowing effects of ions/neutrals and re-emission, while charging effects are simulated only by an increased ion angular spread. Aspect ratio dependent and independent etching as well as transition from etching to deposition are predicted and studied as a function of plasma phase composition. Variations of etching yield versus aspect ratio can be graphically depicted as paths on the two dimensional plot of equal yield contours versus the normalised fluorine and carbonaceous radicals flux. Operation regimes of the plasma allowing minimisation of aspect ratio dependent phenomena can be easily identified by such graphical representation.
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