Abstract
The paper investigates the simulation results of a model for Carbon Nanotube (CNT) field emitters in triode configuration with an integrated gate. Simulation studies have been carried out to analyze and evaluate the performance of a triode device with multiple CNT tips on a silicon substrate. The model has been developed using CST Particle Studio software. The modulating effect of control gate on field emission properties of the device is simulated and dc characteristics at different gate voltages are obtained. It is seen that a small change in gate voltage causes a large change in current between the anode and the cathode. The effect of gate aperture and relative position of the CNT tip with respect to the gate level on field emission is also investigated and modeled. The model helped in providing an understanding of a complete cathode device with an integrated extractor (gate) for potential applications in Vacuum Microelectronic (VME) devices.
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