Abstract
We propose an original design for a far-infrared vertical-cavity surface-emitting laser based on a heterostructure with ten 4.7-nm HgTe / Hg0.3Cd0.7Te quantum wells grown on a [013] GaAs substrate. Its characteristics were calculated, and it was shown that the quality factor of the proposed resonator design can reach 248 at a wavelength of 23.25 μm, which is sufficient for the occurrence of laser generation at this wavelength at a temperature of 20 K and a concentration of nonequilibrium carriers of 1.4 × 1010 cm − 2. The estimate of the threshold pump intensity using CO2 laser radiation at a wavelength of 10.6 μm is 1 W / cm2, which makes it possible to expect continuous wave mode lasing. Such a low-threshold pump intensity should also lead to lasing at substantially higher temperatures.
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