Simulation of electron transport in silicon: impact-ionization processes

Abstract

Using non-parabolic ellipsoidal X and L valleys to represent the conduction band of Si, the authors have developed a Monte Carlo simulation for the study of electron transport properties in this material, under both low and high electric field conditions. Employing a simple model for the characterization of the impact ionization processes they have obtained the ionization coefficient and the probability of electron ionization. The results highlight the importance of the L valleys in very high transport phenomena, and compare favourably with other experimental and theoretical data.