Abstract
We theoretically interpreted the anomalous temperature-dependence of electrical resistivity (T) of zinc oxide (ZnO) nanostructures. Resistivity in the metallic phase is investigated using the Bloch- Gruneisen [BG] model of resistivity, whereas the resistivity (T) in the semiconducting phase of ZnO nanostructures is investigated using the small polaron conduction (SPC) model. In the low temperature domain, T indicates the presence of the semiconducting phase; it reaches an absolute minimum at 180 K and grows linearly with temperature in the high temperature region. The Bloch-Gruneisen [BG] model of resistivity was used to determine the contributions to resistivity made by intrinsic acoustic phonons (ac) and optical phonons (op) characterized by high frequency. The theoretically calculated resistivity by taking into account both phonons i.e. ac and op, as well as the temperature independent resistivity is summed along with the electron-electron interaction e-e to get the overall resistivity of the material. The small polaron conduction (SPC) approach is used to study resistivity in the semiconducting phase at low temperatures below 180 degrees Celsius.
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