Abstract
The results of a computer simulation for islands in semiconductor strained heterojunctions are presented. The atomic positions are individually calculated by means of a minimization procedure of the total elastic energy, evaluated within Keating’s model. Results obtained for Ge/Si and InAs/GaAs systems differ substantially from the ones obtained via the macroscopic theory, which largely overestimates the elastic relaxation energy. The results are applied to evaluate the critical thickness corresponding to undislocated island nucleation in epitaxial strained heterostructures.
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