Abstract
The paper extend a integrated TLLM model to investigate the characteristics of directly modulated semiconductor lasers (DMLs). The model combines an equivalent circuit laser model and a transmission-line laser model (TLLM) for both electrical and optical issues. Microwave aspects such as high-frequency parasitic effects and impedance matching networks of laser diodes can be included in equivalent circuit model. The TLLM model takes into account important considerations such as inhomogeneous effects, carrier-induced refractive index change, spectral dependence of gain and so on. Both electrical and optical properties of a DFB laser are simulated with the model, including the microwave characteristics of package parasitics, intensity response and transient analysis under direct modulation.
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