Abstract
Simulation of Effect of Ar Flow Rate on Silicon Ingot Growth in Directional Solidification System
Highlights
Many reports have focused on the reduction of threading dislocations for the practical production and growth of high-quality polycrystalline silicon from a silicon-based solution, because high-quality silicon ingots can be used to fabricate solar cells with higher solar photovoltaic conversion efficiency and greater cost-effectiveness.[1,2] Growing silicon ingots in a furnace to find the optimal growth parameters in a directional solidification system (DSS) is an expensive and unfeasible method
The reason for this is that as Ar is introduced into the silicon ingot growth furnace, it first comes in contact with the top of the melted silicon
We simulated the growth of silicon ingots in a DSS furnace under different Ar flow rates
Summary
Many reports have focused on the reduction of threading dislocations for the practical production and growth of high-quality polycrystalline silicon from a silicon-based solution, because high-quality silicon ingots can be used to fabricate solar cells with higher solar photovoltaic conversion efficiency and greater cost-effectiveness.[1,2] Growing silicon ingots in a furnace to find the optimal growth parameters in a directional solidification system (DSS) is an expensive and unfeasible method. A pressure-based solver can solve the variables of the governing equations in order, but the governing equations are mostly nonlinear and coupled; we need to use an iterative method to find the numerical solutions.[7,8,9,10,11] In this study, we used the boundary conditions and related parameters in a DSS furnace to simulate the growth of polycrystalline silicon ingots under different Ar flow rates. In contrast to other methods, this simulation method can find the optimum Ar flow rate in advance This decreases the likelihood of failure in silicon ingot growth, reducing the cost of growing silicon ingots in a DSS furnace
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