Abstract
In the present study, an algorithm, combining the Potts model based Monte Carlo (MC) and finite element methods, is developed in order to predict the dynamic recrystallization of tin in tin-rich lead-free solder interconnections during thermal cycling. A correlation between real time and MC simulation time is established. The phenomenon that intermetallic particles provide favorable sites for nucleation of new tin grains in solder matrix is also simulated. It is demonstrated that the present algorithm predicts the incubation period of the recrystallization as well as the growth tendency of the recrystallized regions, in a way consistent with the experimental findings. This quantitative description of the microstructural changes will contribute significantly to the reliability studies of solder interconnections.
Highlights
Solder alloys are widely used bonding materials in electronics industry
The existence of coefficient of thermal expansion (CTE) mismatches between dissimilar materials is the source of deformation and thermomechanical stress in the solder interconnection, which leads to the cracking of the interconnections and failures of the electronic devices
The algorithm was real‐ ized by combining a Potts model based Monte Carlo method and a finite element method
Summary
Solder alloys are widely used bonding materials in electronics industry. The reliability con‐ cerns for solder interconnections, which provide both mechanical and electronic connec‐ tions, are rising with the increasing use of highly integrated components in portable electronic products [1,2,3,4,5,6]. A typical ball grid array (BGA) component board usually consists of a silicone die, molding compound, solder interconnections, and printed wiring board (PWB). The existence of coefficient of thermal expansion (CTE) mismatches between dissimilar materials (about 16 ppm/°C for PWB and 2.5 ppm/°C for Si die [7]) is the source of deformation and thermomechanical stress in the solder interconnection, which leads to the cracking of the interconnections and failures of the electronic devices
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