Simulation of Drain Currents of Double Gated Armchair Graphene Nanoribbon Field-Effect Transistors by Solving Dirac "Like" Equation and Using Transfer Matrix Method

Abstract

We have modelled quantum mechanically the drain current in double gated armchair graphene nanoribbon field-effect transistors (AGNR-FETs). The Dirac 'like' equation was used to determine the electron wave functions in the AGNR. The electron transmittance and the drain current were calculated numerically by using a transfer matrix method (TMM). The results showed that the drain current of the AGNR-FET devices increases with the drain and gate voltages. In addition, the threshold voltage of the devices was obtained to be constant at about 0.3 V. Moreover, the drain current increased with decreasing the thickness of insulator. The different temperatures gave the different characteristics of the drain current.