Abstract
The characteristics of two-junction solar cells were calculated in this work, in which phosphides of group III are used as the top junction, and Si as the bottom junction. The following ternary phosphide compounds Ga0.52In0.48P (1.85 eV), GaPN0.02 (1.9 eV), and GaPN0.04 (1.7 eV) were considered as the active material of the top junction. The use of GaPN0.04 allowed one to reach the current matching with the bottom Si junction and an efficiency of 30% was achieved. In addition, the influence of the layer thickness, the lifetime of minority charge carriers and the electronic affinity on the efficiency of solar energy conversion were considered.
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