Abstract
Hg 1-x Cd x Te (MCT) Photovoltaic Detector is a very important detector for the second-Generation and third-Generation infrared Focal Plane Array (FPA) detectors. Zero-bias resistance-area products (R 0 A) is an important factor of detector's performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device simulation software, both current-voltage characteristic and R 0 A products of n-on-p MCT Photovoltaic Detector with x = 0.223 had been simulated and analyzed with varying implantation dose and working temperature in the voltage range of -0.3V~0V. The stimulated results indicated that dark current and R 0 A products depended distinctly upon the doping concentration and working temperature of photovoltaic detectors, and the optimal doping concentration and appropriate working temperature were obtained for n-on-p MCT Photovoltaic Detector.
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