Abstract
We simulate the charge filling and emission dynamics of n-type a-Si:H Schottky barrier structures assuming a fixed density of states. We find that the spatial distribution of trapped charge in the depletion region depends strongly on the pulse parameters of the experiment. We will discuss to what extent this affects the charge filling and emission dynamics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
