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Abstract
A full-potential linearized augmented-plane-wave (FLAPW) method is used for the investigation of the electronic structure of a series group III–V semiconductors. The electronic structure of low-index clean GaAs surfaces and with thin overlayers of cesium is studied. We analyze Cs(O) coadsorption on the GaAs(0 0 1) surface as well as the influence of Sb on its electron and adsorption properties.
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