Abstract
Because of switching conditions, the SiC MOSFET (Silicon Carbide MOSFET) always remains a critical device in static converters. Its reliability is still a challenge which requires more investigation. This paper studies the accelerated aging effect on the conducted electromagnetic-interference evolution in the N Channel SiC MOSFETs. Simulations are carried out by modifying parameters of the SiC transistor. This modification emulates the aging of the SiC MOSFET used in the buck converter circuit (chopper series type). The conducted electromagnetic-interference evolution is analyzed and presented before and after aging tests in common and differential mode voltages.
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