Abstract

Current–voltage curves of molecular single-electron tunneling transistors are simulated based on a modified theory of single electronics that accounts for the discreteness of the energy spectrum of the molecule. The simulation was performed including effects of energy relaxation of the electrons in the molecule for two limiting cases of fast and slow relaxation, and for both equidistant and randomly spaced energy levels of the molecule. An efficient recursion method allowing a fast calculation of the Gibbs canonical distribution for electrons in the molecule is suggested and realized. A comparison of the simulated I–V curves with the experimental ones shows that the experimental conditions correspond to the slow relaxation case.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.