Abstract
The material porosity can be calculated by numerically simulating bulk defect formation in a silicon carbide-metal bilayer exposed to an inert gas flow with an ion energy of ∼7 keV. The nanopore distributions over sizes and coordinates of a layer ∼1 μm thick are important for estimating its optical properties and the level of radiation damage at the 3C-SiC-metal interface on the side of the semiconductor.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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