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Abstract
Amorphous silicon (a-Si) based thin film tandem junction solar cells are simulated based on a uniform field collection model. From the photovoltaic parameters of a single junction a-Si top cell and a few amorphous silicon–germanium (a-SiGe) bottom cells, the optimized a-Si/a-SiGe tandem cell can be predicted. The simulation results are in good agreement with the experiment. The highest efficiency a-Si/a-SiGe tandem cells are obtained with a combination of a-SiGe characteristics and a relatively large mismatch in the short circuit current between the top and bottom cells. A key reason for this behaviour is that the tandem cell may exhibit a larger fill factor than either one of the component cells under a certain current mismatch.
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