Abstract

Since some p-type ZnOs show the ferromagnetic magnetization increasing with the temperature in a wide temperature range, we proposed a theoretical model to simulate the observed negative temperature-dependent magnetization. This model assumes that ferromagnetism appears from the electrons located in the dopant-induced localized impurity states in the bandgap and near the valence band edge. The strong Coulomb excitation among the electrons in the impurity states leads to spin split resulting in ferromagnetism.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.