Simulation of ambipolar-to-unipolar conversion of carbon nanotube based field effecttransistors

Abstract

Using an oxide right prism attached to the drain electrode of carbon nanotube based fieldeffect transistors (CNTFETs), we have obtained asymmetric transfer characteristics of theCNTFETs based on semiclassical simulation. The calculated results suggest that the slopeof the prism and the electrode thickness play important roles in the transfer characteristicsof such CNTFETs. Through optimizing them, we can convert the performance of theCNTFETs from ambipolar characteristics to unipolar (p-type or n-type) behaviour with asignificant drop in the OFF current or an increase in the ON/OFF current ratio.