Abstract
A model of degradation of AlGaAs-heterostructures has been developed. Parasitic resistance growth and diffusion of aluminum and donor impurities are considered as the main reasons of degradation of the structure. Current transfer models are generalized to the case of structures with continuous impurity distribution profiles. Algorithms based on numerical methods with reduced time complexity have been developed. RTS CVC was calculated before and after the annealing operation in order to verify the models. According to the results of the calculation, it was concluded that the developed algorithms are advisable for reliability prediction applications.
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