Simulation of a hollow-cathode PECVD process in O2/TMDSO for silicon dioxide deposition – Cross-code validation of 2D plasma model and global plasma model

Abstract

We investigate a hollow-cathode plasma system operating in the mixture of O2 and TMDSO using physics- and chemistry-based numerical simulation. Two simulation strategies relevant for hollow-cathode PECVD are developed and cross-correlated – a global plasma model and a 2D plasma model. As a part of this effort, a plasma-kinetic system for O2/TMDSO is proposed, based on an existing system for O2/HMDSO. The two simulation approaches are benchmarked against each other, and their respective advantages and disadvantages are discussed. The models are consequently used to provide insight into the plasma dynamics of the hollow-cathode PECVD system and to understand the plasma chemistry of TMDSO. The paper also identifies the appropriate scaling parameter of the investigated HC-PECVD system, which will be practical for its further development. The results are correlated with experimental observations from literature, finding multiple similarities and consistent behavior.