Simulation of a CIGS Solar Cell with CIGSe&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;/MoSe&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;/Mo Rear Contact Using AFORS-HET Digital Simulation Software

Donafologo Soro,Siaka Toure,Adama Sylla,Aboudoulaye Toure,N’Guessan Armel Ignace,Bernabé Marí,Amal Bouich

doi:10.4236/mnsms.2022.122002

Simulation of a CIGS Solar Cell with CIGSe&lt;sub&gt;2&lt;/sub&gt;/MoSe&lt;sub&gt;2&lt;/sub&gt;/Mo Rear Contact Using AFORS-HET Digital Simulation Software

Donafologo Soro, Siaka Toure + Show 5 more

Open Access

https://doi.org/10.4236/mnsms.2022.122002

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Abstract

In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe2/p + -MoSe2/Mo/SLG. When the thickness of the CIGSe2 absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe2 remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe2. To achieve the expected results, the MoSe2 layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe2 interface layer.

Highlights

Global energy needs are mainly based on the exploitation of energies fossils and fissiles
We sought to optimize the thickness of the MoSe2 interfacial layer, inevitably produced between the absorber layer and the rear Mo contact, by varying its thickness from 0.01 to 0.10 μm in order to observe its impact on the electrical performance of the cell (Figure 5)
Various experimental works reported have demonstrated the presence of a thin layer of MoSe2 at the CIGSe2/Mo contact interface

Summary

Introduction

Global energy needs are mainly based on the exploitation of energies fossils and fissiles (petroleum, natural gas, coal, uranium, etc.). Soaring costs, the fight against greenhouse gas emissions and the concept of sustainable development make the consumption and diversification of new so-called clean energy sources urgent. The development of the generation of photovoltaic cells based on Cu (In, Ga) Se2 suggests many advantages at the environmental and economic levels. They have many advantages, such as high conversion efficiency, high stability, low cost, and adjustable bandgap. Cu (In, Ga) Se2 has become one of the most promising materials for thin film solar cells

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