Abstract
This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schrodinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
