Simulation model to enhance Bragg reflector assisted GeSn SACM-SPAD performance for 1550 nm LIDAR applications in autonomous vehicles

Abstract

A safe 3-D lidar sensor for autonomous vehicle creates a high demand on 1550 nm SPADs detectors. Due to the limitation of the energy band gab and absorption coefficient of Si and Ge, their photodetectors have low efficiency at the 1550 nm wavelength. Doping Ge with Sn reduces its bandgap and enables higher efficiency in this range while adding Bragg reflector represents a smart way to increase absorption area effective thickness. Here a simulation model for Ge(1-x)Snx SACM SPAD is proposed to work as a 1550 nm laser detector. Two Bragg reflectors are built using Si\\SiGe and Si\\SiGeSn layers. Results show a significant enhancement on detector optical properties. PDP reaches 38 % at room temperature and the increase in Pdp due to Bragg reflector reaches 66 %. Although DCR also increases, it can be handled with proper dead time configuration.