Simulation Model of Dual Boost Inverter using Half Cycle Modulation Technique

Abstract

The output voltage of conventional full bridge inverters is lower than the DC input voltage. In applications where the input DC voltage is very low, front-end step-up converters are typically needed, resulting in a two-stage conversion process. The Dual boost inverter (DBI) offers many benefits, including fewer power devices, a straightforward design, and the ability to operate in both boost and buck modes. The traditional modulation technique used in DBI has a number of disadvantages, including the fact that all the devices work at higher frequencies and must tolerate larger voltage and current stresses, which increases conduction and switching losses and lowers efficiency. This study suggests a novel modulation technique called half cycle modulation (HCM), which makes all devices work at high frequency only every half cycle, significantly reducing conduction and switching losses and boosting DBI efficiency. Additionally, an improved DBI is suggested that can bypass the inductor current with little switching stress in order to reduce the current circulation losses in DBI. In this study, a detailed comparison between the traditional DBI and the HCM modulated DBI is discussed. In the MATLAB/SIMULINK software, the suggested DBI and its modulation techniques are simulated, and the results are also shown.