Simulation model and it's sharp tuning for SiO<inf>2</inf> thin film transmission line

Abstract

This paper aims to build an simulation model for SiO2 thin film coplanar waveguide transmission line. After sharp tuning the model's parameters, an optimization simulation model has been found. The S-parameters will be presented through wafer-probe measurements and EM simulation (electromagnetic simulation). In order to get the better fit between measurements data and simulations, parameters such as the conduct width are tuned. In view of the results, the most appropriate parameters will be found and an optimization simulation model of the test structure will be presented. The optimization simulation model has been defined as CPW transmission line with a known SiO2 layer which using ADS (Advanced Design System 2012.08) simulations and two ports S-parameters measurements up to 6 GHz. The result proves that this model is suitable for characterization of the new dielectric materials by experimental validation.