Abstract
Modeling of high-density chemically reacting plasmas at low pressures (<10 mtorr) is of interest to the microelectronics industry for improving tool and process designs. High-density plasma simulations were performed using a fluids code to predict electron behavior, coupled to a direct simulation Monte Carlo (DSMC) program for neutral and ion transport. Images presented are for a chlorine plasma simulation at 10 mtorr and include the temperature difference between neutral species, depicting the nonthermal equilibrium nature of the plasma, and angular and energy distributions of ions and neutrals to the wafer surface.
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