Abstract
The X-ray intensity distribution in the incident plane for a crystal containing a straight dislocation has been computed. The trajectories of the wave fields have been drawn in the case of a planar or spherical incident wave, and it has been shown that the interaction of the defect with the X-rays gives rise to new directions of propagation, near the reflected direction. It has also been shown that the importance of this interaction decreases when the defect comes near the reflected direction.
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Schedule a callMore From: Acta Crystallographica Section A: Crystal Physics, Diffraction, Theoretical and General Crystallography
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