Abstract
This investigation focuses on a simulation-based power-loss optimization scheme, which is applied to laboratory developed general-purpose inverter-stack circuit, fabricated using high-voltage SiC-MOSFET. The optimization mainly addresses the external elements under fixed output current. It is found, that an increase in switching frequency causes increased loss, which is however less than that calculated by following the conventionally predicted linear dependence on the frequency. The switching loss is also strongly varying, in accordance with the output current variation, which is determined by the circuit requirements. Here, it is demonstrated, that circuit simulation with an accurate compact model can be successfully applied to realize significant improvements, leading to lower power loss under the requested operating condition. It is also found that the SiC-MOSFET can maintain the efficiency of nearly 98% even for high-frequency operations.
Highlights
Due to global-warming problems, an urgent task at hand is sufficient reduction of worldwide energy consumption
The authors have mainly investigated the optimization of external element values, to reduce the switching loss of the studied general-purpose inverter-stack (GPIS) circuit
The compact model HiSIM_HSiC was applied, which solves the potential distribution within the SiC MOSFET to simulate the device characteristics accurately
Summary
Due to global-warming problems, an urgent task at hand is sufficient reduction of worldwide energy consumption. Though HiSIM_HSiC includes the self-heating effect explicitly, the present investigation focuses on 25◦C, so that the major contributing factor for the power-loss increase can be identified based on the device characteristics. A. COMPARISON WITH MEASUREMENTS Since the power-loss optimization is performed based on the circuit simulation, an accurate model card must first be developed to accurately predict the device characteristics. COMPARISON WITH MEASUREMENTS Since the power-loss optimization is performed based on the circuit simulation, an accurate model card must first be developed to accurately predict the device characteristics These device characteristics are determined by the current-voltage as well as the capacitance characteristics. The reason is that the load-element values determine the Iload, which in turn determines the efficiency of the circuit
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
