Simulation Based Investigation on the Performance of Metal Oxides as Charge Transport Layers in Lead/Tin Perovskite Solar Cells Using SCAPS 1D

Abstract

Perovskite solar cells have been in the lime-light of emerging photovoltaic technology owing to their rapid rise in efficiency. The solar capacitance simulator (SCAPS −1D) is a simulation tool that can be used to investigate on the factors that affect the performance of planar perovskite solar cells. In this work, a simulation model has been developed to investigate the performance of metal oxides as charge transport layers for lead and tin based perovskite solar cells. The simulation study on the optimization of energy band gap and electron affinity of ZnO electron transport material with lead/tin perovskite using inorganic metal oxide Cu2O as hole transport materials is done. The influence of trap defect density (Nt) and acceptor doping concentration (Na) of the perovskite layer on the solar cell performance is also evaluated. The doping concentration and defect density of the perovskite layer greatly influence the recombination rate which determines the efficiency of perovskite solar cell.The common p type metal oxides CuO and NiO are experimented for the perovskite solar cell using lead/tin perovskite. The simulation results prove Cu2O as the best metal oxide hole transport material that can be utilized for efficient ZnO based perovskite solar cells.