Abstract
In this study, cosimulation with Q3D and Simplorer were adopted to design a single-phase power stack with equal output current on three paralleled IGBT modules in high power application, therefore, the derating of total current will be reduced, which can improve the current utilization and power density of power stack. The performance of the designed stack was verified using a double-pulse test (DPT). The circuit used in the DPT regarded the power stack output current as static current, which is a critical index to evaluate current sharing. The static current sharing among the IGBT modules was mainly dependent on the stray inductance of the DC busbar, IGBT modules, and phase output bar (POB), which is used to connect the IGBT modules to load, in parallel paths of the power stack. Cosimulation was performed to determine the stray inductance of the IGBT modules, DC busbar and POB, and a constant-current-slope method was used to verify the inductance. Subsequently, design the shapes of DC busbar and POB for attaining maximum ratio of imbalanced current (MRIC) of the three IGBT modules is within 3% under 200% (2400A) rated current. The cosimulation results indicated that the MRIC of the current paths in power stack were 0.8%. Finally, three IGBT modules and a gate driver were used to construct power stack with 1000V DC link. The experimental results obtained by DPT indicated that the MRIC was 0.9% under 200% rated current, demonstrating the effectiveness of the proposed stray inductance design method.
Highlights
Insulated-gate bipolar transistors (IGBTs) are widely used in medium-voltage, high-voltage, and high-power systems because of their high current rating, high withstand voltage, and low loss
The maximum ratio of imbalanced current (MRIC) of the traditional and proposed phase output bar (POB) were 5.9% and 0.8%, respectively, and the and maximal current difference (MCD) of these POBs were 216 and 30A, respectively. These results indicate that the proposed POB enabled better current sharing among the IGBT modules than did the traditional POB
In this study, a power stack with equal stray inductances along the static current flow paths in three IGBT modules connected in parallel was developed
Summary
Insulated-gate bipolar transistors (IGBTs) are widely used in medium-voltage, high-voltage, and high-power systems because of their high current rating, high withstand voltage, and low loss. A converter or an inverter is composed of low- or medium-voltage IGBT modules connected in series [3], [4] or parallel to increase the output power [5], which reduces the cost of wind turbine [6], traction driver [7], and ventilation [8] applications. IGBTs connected in parallel can effectively increase the output current, the power circuit should be designed such that it provides equal. The authors of [10] demonstrated that the derating of total current must be conducted by considering the current imbalance of IGBTs connected in parallel. They derived a formula that indicates that the derating of total current is 17.4% under an imbalance current ratio of 15% for three IGBTs connected in parallel
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