Abstract

Most of the current SOI high-temperature pressure sensors are packaged in lead bonding, where the gold wire is in direct contact with the bonding bump and filled with silicone oil as a protective medium. Silicone oil expands at high temperatures, limiting the sensor's operating temperature to 150 °C or less. To solve this problem, this paper uses an anodic bonding process to bond borosilicate glass wafers to SOI wafers, which are subsequently filled with conductive silver paste and sintered at a high temperature to avoid direct contact between the leads and the chip pads. The reliability of the leadless package structure under high temperature, high pressure, and random vibration is verified by multi-field coupling stress simulation. High-temperature storage and random vibration tests were conducted according to the application requirements, and the results show that the sensor has good reliability and stability.

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