Abstract
MOS varactors have been used commonly as tuning components in LC-tank voltage-controlled oscillators (VCOs) based on standard CMOS technology. MOS varactor topologies include traditional D=S=B structure, inversion-mode (I-MOS) structure and accumulation- mode (A-MOS) structure. A novel simulation method of the three MOS varactors is proposed. The A-MOS structures are implemented by developed models, which are based on sub-circuits utilizing BSIM3v3 models. Simulation results show that the I-MOS and A-MOS varactors has a wider tuning range than the D=S=B varactor. Three MOS varactors are implemented in CSMC 0.5um CMOS technology.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
