Simulation and optimization of metal gate CMOS process and circuit by TCAD

Abstract

The feature size of CMOS transistors is shrinking as the semiconductor industry and technology advance. This phenomenon will have significant research implications for how to change device performance and maintain good performance. As a result, this paper completed a design and simulation of the CMOS process flow using TCAD. It was discovered through a qualitative analysis of the simulation results that the transfer and input characteristics of NMOS transistors decrease proportionally with the scale factor.