Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET

Abstract

A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.