Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Cristina Medina-Bailon,Asen Asenov,Daniel Nagy,Tapas Dutta,Fikru Adamu-Lema,Vihar P Georgiev,Ali Rezaei

doi:10.3390/mi12060680

Cristina Medina-Bailon, Asen Asenov + Show 5 more

Open Access

https://doi.org/10.3390/mi12060680

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Journal: Micromachines	Publication Date: Jun 10, 2021
Citations: 8	License type: CC BY 4.0

Affiliation: University of Glasgow

Abstract

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

Highlights

Introduction andState-of-the-ArtTechnology computer-aided design (TCAD) tools are an essential part of the research and design in the development of future nano-electronic devices
We have illustrated the capabilities of Nano-Electronic Simulation Software (NESS), a flexible nano-electronic device simulator, to simulate advanced nanoscale semiconductor devices
Based on the discussion and the results in this paper we have shown that NESS is capable of simulating various novel device architectures such as nano-wires, resonant tunneling diodes, tunneling field-effect transistors, and negative capacitance transistors

Summary

Introduction and State-of-the-Art

Technology computer-aided design (TCAD) tools are an essential part of the research and design in the development of future nano-electronic devices. In order to keep up with Moore’s law, a novel architecture was adopted by the industry, the so called FinFET This was the first 3D device to have a non-planar channel. It is predicted that the nanowire transistor could be one of the main future contenders for enabling further scaling It has the advantage of being fabricated in a stacked configuration and so it can achieve high drive currents in denser silicon chips extending Moore’s. Our objective is to show how NESS can help to understand the physics and the behavior of different novel devices, aiding and accelerating their research and development. The great advantage of TFETs is that the carrier injection is due to the band-to-band tunneling (BTBT) mechanism, which, in turn, allows the achievement of a very low leakage current [12] This is ideal for very low-power device applications.

Overview of NESS

Nanowire Transistors

Conclusions